Electroplated AU for conformal coating of high aspect ratio silicon structures
| DWPI Title: Method for electroplating non-metallic grating for X-ray imaging applications, involves electroplating metallic layer directly on seed layer by pulsing electroplating bath solution comprising thallium across non-metallic grating |
| Abstract: A method for electroplating a nonmetallic grating including providing a nonmetallic grating; performing an atomic layer deposition (ALD) reaction to form a seed layer on the nonmetallic grating; and electroplating a metallic layer on the seed layer such that the metallic layer uniformly and conformally coats the nonmetallic grating. An apparatus including a silicon substrate having gratings with an aspect-ratio of at least 20:1; a atomic layer deposition (ALD) seed layer formed on the gratings; and an electroplated metallic layer formed on the seed layer, wherein the electroplated metallic layer uniformly and conformally coats the gratings. |
| Use: Method for electroplating a non-metallic grating or high-aspect ratio deep reactive-ion etching silicon grating for optic applications i.e. X-ray imaging applications. |
| Advantage: The method enables providing pressure drop to create a pulling effect so as to effectively pull precursor vapor into the ALD chamber, thus facilitating transfer of the precursor to the ALD chamber. |
| Novelty: The method involves providing a non-metallic grating (100) having an aspect-ratio of from 50:1 to 60:1. An atomic layer deposition (ALD) reaction is performed to form a seed layer (106) directly on the non-metallic grating. A metallic layer (108) is electroplated directly on the seed layer by pulsing electroplating bath solution comprising thallium across the non-metallic grating at pulse frequency of from 50 Hz to 100 Hz, a pulse profile of duty and pulse current of 2 mA/cm2, where the metallic layer uniformly and conformally coats the seed layer such that thickness of the metallic layer is the same along an entire surface of the seed layer and the metallic layer comprises thickness of from 0.1 microns to 0.6 microns. The non-metallic grating comprises silicon. The seed layer comprises palladium or platinum. The metallic layer comprises gold. |
| Filed: 11/15/2013 |
| Application Number: US14081342A |
| Tech ID: SD 12227.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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