| Abstract: | An electronic device includes a semiconductor memory. The semiconductor
memory includes first lines extending in a first direction; second lines
extending in a second direction crossing the first direction; insulating
patterns interposed between the first and second lines at first
intersections of the first and second lines; and variable resistance
patterns interposed between the first and the second lines at second
intersections of the first and second lines. A central intersection is
defined by respective central lines of the first and second lines and
corresponds to a coordinate (0, 0). The first intersections are located
on first to (n+1).sup.th virtual lines, the (n+1).sup.th virtual line
having a polygonal shape in which vertexes correspond to coordinates
(-(k-n), 0), (k-n, 0), (0, k-n) and (0, -(k-n)) where k is a natural
number and n is an integer in a range of 0 to (k-1). |