Electronic device and method for fabricating the same
| Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes first lines extending in a first direction; second lines extending in a second direction crossing the first direction; insulating patterns interposed between the first and second lines at first intersections of the first and second lines; and variable resistance patterns interposed between the first and the second lines at second intersections of the first and second lines. A central intersection is defined by respective central lines of the first and second lines and corresponds to a coordinate (0, 0). The first intersections are located on first to (n+1).sup.th virtual lines, the (n+1).sup.th virtual line having a polygonal shape in which vertexes correspond to coordinates (-(k-n), 0), (k-n, 0), (0, k-n) and (0, -(k-n)) where k is a natural number and n is an integer in a range of 0 to (k-1). |
| Filed: 10/29/2014 |
| Application Number: 14/526988 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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