| Abstract: | A silicon metal-oxide semiconductor device transports a spin-polarized
single electron. An array of silicon quantum dot electrodes is arranged
atop a silicon dioxide layer of a silicon metal-oxide semiconductor. The
array comprises at least a first electrode and a second electrode
adjacent to the first electrode. A transport control logic for
individually controls a voltage applied to the electrodes. The transport
control logic is configured to gradually decrease a voltage at the first
electrode while gradually increasing a voltage at the second electrode.
Localization of the single electron is adiabatically transferred from the
first electrode to the second electrode while maintaining a desired
energy gap between a ground state and a first excited state of the single
electron. |