Electroless atomic layer deposition
| DWPI Title: Electroless atomic layer deposition used to modify chemical reactivity, involves generating sacrificial material electroless layer, performing surface-limited galvanic exchange to oxidize, and depositing another material |
| Abstract: A method of electroless atomic layer deposition is described. The method electrolessly generates a layer of sacrificial material on a surface of a first material. The method adds doses of a solution of a second material to the substrate. The method performs a galvanic exchange reaction to oxidize away the layer of the sacrificial material and deposit a layer of the second material on the surface of the first material. The method can be repeated for a plurality of iterations in order to deposit a desired thickness of the second material on the surface of the first material. |
| Use: Electroless atomic layer deposition is used to modify chemical reactivity on metal surface used in electronic semiconductor, magnetic devices and optical coatings. |
| Advantage: The method enhances mechanical properties, electrical properties, thermal properties, optical properties and catalytic properties of the surface layer. The electroless hydride formation does not require instrumentation and generates an electrical current proportional to substrate surface area. |
| Novelty: Electroless atomic layer deposition involves generating an electroless layer of sacrificial material on a surface (115) of a material (M1) immersed in an electrolyte under surface-limited process, having preset atomic thickness, forming a hydride layer, constraining the amount of hydride in the material (M1) so that the number of moles of hydride does not exceed the amount of surface hydride (112), adding doses of material solution (M2), performing surface-limited galvanic exchange reaction, and depositing the layer of the material (M2) on the surface of the material (M1). |
| Filed: 2/25/2014 |
| Application Number: US14189866A |
| Tech ID: SD 12314.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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