| Abstract: A method is disclosed for singulating die from a semiconductor substrate
(e.g. a semiconductor-on-insulator substrate or a bulk silicon substrate)
containing an oxide layer (e.g. silicon dioxide or a silicate glass) and
one or more semiconductor layers (e.g. monocrystalline or polycrystalline
silicon) located above the oxide layer. The method etches trenches
through the substrate and through each semiconductor layer about the die
being singulated, with the trenches being offset from each other around
at least a part of the die so that the oxide layer between the trenches
holds the substrate and die together. The trenches can be anisotropically
etched using a Deep Reactive Ion Etching (DRIE) process. After the
trenches are etched, the oxide layer between the trenches can be etched
away with an HF etchant to singulate the die. A release fixture can be
located near one side of the substrate to receive the singulated die. |
| Filed: 4/13/2010 |
| Application Number: 12/758838 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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