|Abstract: ||Devices and methods for non-volatile analog data storage are described
herein. In an exemplary embodiment, an analog memory device comprises a
potential-carrier source layer, a barrier layer deposited on the source
layer, and at least two storage layers deposited on the barrier layer.
The memory device can be prepared to write and read data via application
of a biasing voltage between the source layer and the storage layers,
wherein the biasing voltage causes potential-carriers to migrate into the
storage layers. After initialization, data can be written to the memory
device by application of a voltage pulse between two storage layers that
causes potential-carriers to migrate from one storage layer to another. A
difference in concentration of potential carriers caused by migration of
potential-carriers between the storage layers results in a voltage that
can be measured in order to read the written data.