| Abstract: A visible light source device is described based on a light emitting diode and a nanocluster-based film. The light emitting diode utilizes a semiconductor quantum well structure between n-type and p-type semiconductor materials on the top surface a substrate such as sapphire. The nanocluster-based film is deposited on the bottom surface of the substrate and can be derived from a solution of MoS.sub.2, MoSe.sub.2, WS.sub.2, and WSe.sub.2 particles of size greater than approximately 2 nm in diameter and less than approximately 15 nm in diameter, having an absorption wavelength greater than approximately 300 nm and less than approximately 650 nm. |
| Filed: 6/6/2002 |
| Application Number: 10/165824 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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