| Abstract: | A reversible memory element is provided. The reversible memory element
comprises a reversible memory cell comprising a Josephson junction and a
passive inductor. A ballistic interconnect is connected to the reversible
memory cell by a bidirectional input/output port. A polarized input
fluxon propagating along the ballistic interconnect exchanges polarity
with a stationary stored fluxon in the reversible memory cell in response
to the input fluxon reflecting off the reversible memory cell. |