Ballistic reversible superconducting memory element
| DWPI Title: Reversible memory element used to read and write binary data and as superconducting electronic circuits and one-port, two-state device comprises reversible memory cell comprising Josephson junction and passive inductor which form loop, ballistic interconnect and bidirectional input/output port |
| Abstract: A reversible memory element is provided. The reversible memory element comprises a reversible memory cell comprising a Josephson junction and a passive inductor. A ballistic interconnect is connected to the reversible memory cell by a bidirectional input/output port. A polarized input fluxon propagating along the ballistic interconnect exchanges polarity with a stationary stored fluxon in the reversible memory cell in response to the input fluxon reflecting off the reversible memory cell. |
| Use: The element is useful: for reading and writing binary data (claimed); as a superconducting electronic circuits; and as one-port, two-state device comprising a planar, unbiased or reactive circuit. |
| Advantage: The element: improves computational energy efficiency; minimizes any negative impacts on manufacturing cost-efficiency; minimizes parasitic dissipative effects resulting from RF emission, loss tangents in surrounding dielectric materials, and other physical nonidealities; and utilizes discrete topological degrees of freedom. |
| Novelty: Reversible memory element comprises: a reversible memory cell comprising a Josephson junction (118), and a passive inductor (122) connected to the Josephson junction so that the passive inductor and the Josephson junction to form a loop; a ballistic interconnect (102); and a bidirectional input/output port connecting the reversible memory cell and ballistic interconnect, where terminals of the bidirectional input/output port are shunted across the Josephson junction and shunted across the passive inductor, a polarized input fluxon (108) propagating along the ballistic interconnect exchanges polarity with a stationary stored fluxon in the reversible memory cell in response to the input fluxon reflecting off the reversible memory cell. |
| Filed: 7/30/2020 |
| Application Number: US16943613A |
| Tech ID: SD 15103.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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