Ballistic reversible superconducting memory element
| Abstract: A reversible memory element is provided. The reversible memory element comprises a reversible memory cell comprising a Josephson junction and a passive inductor. A ballistic interconnect is connected to the reversible memory cell by a bidirectional input/output port. A polarized input fluxon propagating along the ballistic interconnect exchanges polarity with a stationary stored fluxon in the reversible memory cell in response to the input fluxon reflecting off the reversible memory cell. |
| Filed: 7/30/2020 |
| Application Number: 16/943613 |
| Tech ID: SD 15103 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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