| Abstract: A reversible memory element is provided. The reversible memory element
comprises a reversible memory cell comprising a Josephson junction and a
passive inductor. A ballistic interconnect is connected to the reversible
memory cell by a bidirectional input/output port. A polarized input
fluxon propagating along the ballistic interconnect exchanges polarity
with a stationary stored fluxon in the reversible memory cell in response
to the input fluxon reflecting off the reversible memory cell. |
| Filed: 7/30/2020 |
| Application Number: 16/943613 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Attribution for Derwent World Patents Index Records published on Sandia ® Clarivate. All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |