Apparatus and method to measure semiconductor optical absorption using microwave charge sensing
| DWPI Title: Method for measuring semiconductor optical absorption using microwave charge sensing involves radiating semiconductor sample with optical excitation pump beam and measuring time decay of microwaves reflected from semiconductor sample |
| Abstract: A time-resolved microwave reflectance apparatus comprises a pulsed or modulated optical source that irradiates a semiconductor sample with an excitation pump beam, a microwave oscillator that irradiates the sample with a continuous beam of microwaves, and a microwave detector that detects the microwaves reflected by the sample. Therefore, charge detection, rather than conventional absorption measurements (that detect the loss of photons), can be used to extract the absorption coefficient and band edge of a semiconductor material. |
| Use: Method for measuring semiconductor optical absorption using microwave charge sensing. |
| Advantage: By irradiating the sample with the pulsed or modulated optical excitation pump beam and measuring the time decay of the microwaves reflected from the sample after irradiation by the optical excitation pump beam, thus, charge detection, rather than conventional absorption measurements, can be used to extract the absorption coefficient and band edge of a semiconductor material and low photoluminescence can be also detected. |
| Novelty: The method involves providing a time-resolved microwave reflectance apparatus then irradiating the semiconductor sample with the optical excitation pump beam. The apparatus has a microwave oscillator adapted to irradiate the semiconductor sample with a continuous beam of microwaves, and a microwave detector adapted to detect microwaves reflected from the semiconductor sample. The next step is measuring the time decay of the microwaves reflected from the semiconductor sample after irradiation of the semiconductor sample by the optical excitation pump beam. |
| Filed: 8/19/2019 |
| Application Number: US16543891A |
| Tech ID: SD 14807.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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