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Systems and methods to maintain optimum stoichiometry for reactively sputtered films

United States Patent

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September 11, 2018
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The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.
March 27, 2015
C23C 14/34 (20060101); H01J 37/32 (20060101);
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.