| Abstract: A method includes etching a release layer that is coupled between a
plurality of semiconductor devices and a substrate with an etch. The
etching includes etching the release layer between the semiconductor
devices and the substrate until the semiconductor devices are at least
substantially released from the substrate. The etching also includes
etching a protuberance in the release layer between each of the
semiconductor devices and the substrate. The etch is stopped while the
protuberances remain between each of the semiconductor devices and the
substrate. The method also includes separating the semiconductor devices
from the substrate. Other methods and apparatus are also disclosed. |
| Filed: 10/30/2013 |
| Application Number: 14/67433 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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