| Abstract: Accessing a workpiece object in semiconductor processing is disclosed.
The workpiece object includes a mechanical support substrate, a release
layer over the mechanical support substrate, and an integrated circuit
substrate coupled over the release layer. The integrated circuit
substrate includes a device layer having semiconductor devices. The
method also includes etching through-substrate via (TSV) openings through
the integrated circuit substrate that have buried ends at or within the
release layer including using the release layer as an etch stop. TSVs are
formed by introducing one or more conductive materials into the TSV
openings. A die singulation trench is etched at least substantially
through the integrated circuit substrate around a perimeter of an
integrated circuit die. The integrated circuit die is at least
substantially released from the mechanical support substrate. |
| Filed: 10/25/2013 |
| Application Number: 14/63152 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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