| Abstract: A structured wafer that includes through passages is used for device
processing. Each of the through passages extends from or along one
surface of the structured wafer and forms a pattern on a top surface area
of the structured wafer. The top surface of the structured wafer is
bonded to a device layer via a release layer. Devices are processed on
the device layer, and are released from the structured wafer using
etchant. The through passages within the structured wafer allow the
etchant to access the release layer to thereby remove the release layer. |
| Filed: 4/2/2014 |
| Application Number: 14/243665 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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