Impurity-induced disorder in III-nitride materials and devices
| Patent Number: | 8,895,335 |
| Issued: | 11/25/2014 |
| Official Filing: | View the Complete Patent |
| Abstract: | A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces. |
| Filed: | 7/26/2012 |
| Application Number: | 13/558,516 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |