Memristor using a transition metal nitride insulator
| Patent Number: | 8,872,246 |
| Issued: | 10/28/2014 |
| Official Filing: | View the Complete Patent |
| Abstract: | Apparatus is disclosed in which at least one resistive switching element is interposed between at least a first and a second conducting electrode element. The resistive switching element comprises a metal oxynitride. A method for making such a resistive switching element is also disclosed. |
| Filed: | 1/25/2013 |
| Application Number: | 13/750,451 |
| Related Opportunity: |
Full Stack Neuromorphic |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |