| Abstract: Dramatic improvements in metallization integrity and electroceramic thin
film performance can be achieved by the use of the ZnO buffer layer to
minimize interfacial energy between metallization and adhesion layers. In
particular, the invention provides a substrate metallization method
utilizing a ZnO adhesion layer that has a high work of adhesion, which in
turn enables processing under thermal budgets typically reserved for more
exotic ceramic, single-crystal, or metal foil substrates. Embodiments of
the present invention can be used in a broad range of applications beyond
ferroelectric capacitors, including microelectromechanical systems,
micro-printed heaters and sensors, and electrochemical energy storage,
where integrity of metallized silicon to high temperatures is necessary. |
| Filed: 8/13/2012 |
| Application Number: 13/584641 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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