Amber light-emitting diode comprising a group III-nitride nanowire active region
| Patent Number: | 8,785,905 |
| Issued: | 7/22/2014 |
| Official Filing: | View the Complete Patent |
| Abstract: | A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach. |
| Filed: | 1/17/2013 |
| Application Number: | 13/743,438 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |