| Abstract: Group III-nitride epilayers can be grown directly on copper substrates
using intermediate passivation layers. For example, single crystalline
c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth
relies on a low temperature AlN passivation layer to isolate any alloying
reaction between Ga and Cu. |
| Filed: 3/15/2013 |
| Application Number: 13/836594 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Attribution for Derwent World Patents Index Records published on Sandia ® Clarivate. All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |