| Abstract: A method for growing low-dislocation-density material atop a layer of the
material with an initially higher dislocation density using a monolayer
of spheroidal particles to bend and redirect or directly block vertically
propagating threading dislocations, thereby enabling growth and
coalescence to form a very-low-dislocation-density surface of the
material, and the structures made by this method. |
| Filed: 2/18/2009 |
| Application Number: 12/388103 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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