Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres
| Patent Number: | 8,425,681 |
| Issued: | 4/23/2013 |
| Official Filing: | View the Complete Patent |
| Abstract: | A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method. |
| Filed: | 2/18/2009 |
| Application Number: | 12/388,103 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |