Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films
| Patent Number: | 8,349,633 |
| Issued: | 1/8/2013 |
| Official Filing: | View the Complete Patent |
| Abstract: | A denticulated Group III nitride structure that is useful for growing Al.sub.xGa.sub.1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density. |
| Filed: | 5/26/2009 |
| Application Number: | 12/471,690 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |