MIS-based sensors with hydrogen selectivity
| Patent Number: | 7,340,938 |
| Issued: | 3/11/2008 |
| Official Filing: | View the Complete Patent |
| Abstract: | The invention provides hydrogen selective metal-insulator-semiconductor sensors which include a layer of hydrogen selective material. The hydrogen selective material can be polyimide layer having a thickness between 200 and 800 nm. Suitable polyimide materials include reaction products of benzophenone tetracarboxylic dianhydride 4,4-oxydianiline m-phenylene diamine and other structurally similar materials. |
| Filed: | 2/24/2006 |
| Application Number: | 11/361,310 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |