| Abstract: | A method of optical modulation in a non-resonant epsilon-near-zero (EMZ)
plasmonic electro-optical modulator is provided. An optical carrier is
injected into a waveguide optically coupled to a layer of transparent
conductive material having an epsilon-near-zero (ENZ) wavelength. The
transparent conductive material layer constitutes a portion of a
capacitive structure that includes a gate dielectric layer. A
time-varying bias voltage applied across the gate dielectric layer shifts
the ENZ wavelength toward the carrier wavelength, and thereby impresses a
phase modulation pattern on the carrier wave. |