| Abstract: Methods are provided for fabricating a HEMT (high-electron-mobility
transistor) that involve sequential epitaxial growth of III-nitride
channel and barrier layers, followed by epitaxial regrowth of further
III-nitride material through a window in a mask layer. The regrowth takes
place on the barrier layer, only in the access region or regions. Devices
made according to the disclosed methods are also provided. |
| Filed: 4/16/2019 |
| Application Number: 16/385193 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Attribution for Derwent World Patents Index Records published on Sandia ® Clarivate. All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |