| Abstract: A non-volatile memory device is described herein. The non-volatile memory
device includes a diffusive memristor electrically coupled to a redox
transistor. The redox transistor includes a gate, a source, and a drain,
wherein the gate comprises a first storage element that acts as an ion
reservoir, and a channel between the source and the drain comprises a
second storage element, wherein a state of the memory device is
represented by conductance of the second storage element. |
| Filed: 6/19/2018 |
| Application Number: 16/12430 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Attribution for Derwent World Patents Index Records published on Sandia ® Clarivate. All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |