| Abstract: Ion implantation can be used to define a thermal dissipation path that
allows for better thermal isolation between devices in close proximity on
a microelectronics chip, thus providing a means for higher device density
combined with better performance. |
| Filed: 8/21/2018 |
| Application Number: 16/107470 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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