| Abstract: The present invention relates to systems and methods for preparing
reactively sputtered films. The films are generally thin transition metal
oxide (TMO) films having an optimum stoichiometry for any useful device
(e.g., a sub-stoichiometric thin film for a memristor device). Described
herein are systems, methods, and calibrations processes that employ rapid
control of partial pressures to obtain the desired film. |
| Filed: 3/27/2015 |
| Application Number: 14/671284 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Attribution for Derwent World Patents Index Records published on Sandia ® Clarivate. All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |