| Abstract: A silicon metal-oxide semiconductor device transports a spin-polarized
single electron. An array of silicon quantum dot electrodes is arranged
atop a silicon dioxide layer of a silicon metal-oxide semiconductor. The
array comprises at least a first electrode and a second electrode
adjacent to the first electrode. A transport control logic for
individually controls a voltage applied to the electrodes. The transport
control logic is configured to gradually decrease a voltage at the first
electrode while gradually increasing a voltage at the second electrode.
Localization of the single electron is adiabatically transferred from the
first electrode to the second electrode while maintaining a desired
energy gap between a ground state and a first excited state of the single
electron. |
| Filed: 12/16/2016 |
| Application Number: 15/381819 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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