| Abstract: A diode includes a second semiconductor layer over a first semiconductor
layer. The diode further includes a third semiconductor layer over the
second semiconductor layer, where the third semiconductor layer includes
a first semiconductor element over the second semiconductor layer. The
third semiconductor layer additionally includes a second semiconductor
element over the second semiconductor layer, wherein the second
semiconductor element surrounds the first semiconductor element. Further,
the third semiconductor layer includes a third semiconductor element over
the second semiconductor element. Furthermore, a hole concentration of
the second semiconductor element is less than a hole concentration of the
first semiconductor element. |
| Filed: 5/27/2016 |
| Application Number: 15/166783 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Attribution for Derwent World Patents Index Records published on Sandia ® Clarivate. All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |