| Abstract: | A diode includes a second semiconductor layer over a first semiconductor
layer. The diode further includes a third semiconductor layer over the
second semiconductor layer, where the third semiconductor layer includes
a first semiconductor element over the second semiconductor layer. The
third semiconductor layer additionally includes a second semiconductor
element over the second semiconductor layer, wherein the second
semiconductor element surrounds the first semiconductor element. Further,
the third semiconductor layer includes a third semiconductor element over
the second semiconductor element. Furthermore, a hole concentration of
the second semiconductor element is less than a hole concentration of the
first semiconductor element. |