| Abstract: A method of electroless atomic layer deposition is described. The method
electrolessly generates a layer of sacrificial material on a surface of a
first material. The method adds doses of a solution of a second material
to the substrate. The method performs a galvanic exchange reaction to
oxidize away the layer of the sacrificial material and deposit a layer of
the second material on the surface of the first material. The method can
be repeated for a plurality of iterations in order to deposit a desired
thickness of the second material on the surface of the first material. |
| Filed: 2/25/2014 |
| Application Number: 14/189866 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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