| Abstract: A novel thermal source comprising a semiconductor hyperbolic metamaterial
provides control of the emission spectrum and the angular emission
pattern. These properties arise because of epsilon-near-zero conditions
in the semiconductor hyperbolic metamaterial. In particular, the thermal
emission is dominated by the epsilon-near-zero effect in the doped
quantum wells composing the semiconductor hyperbolic metamaterial.
Furthermore, different properties are observed for s and p polarizations,
following the characteristics of the strong anisotropy of hyperbolic
metamaterials. |
| Filed: 12/15/2016 |
| Application Number: 15/379786 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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