| Abstract: The present disclosure relates to resistive field structures that provide
improved electric field profiles when used with a semiconductor device.
In particular, the resistive field structures provide a uniform electric
field profile, thereby enhancing breakdown voltage and improving
reliability. In example, the structure is a field cage that is configured
to be resistive, in which the potential changes significantly over the
distance of the cage. In another example, the structure is a resistive
field plate. Using these resistive field structures, the characteristics
of the electric field profile can be independently modulated from the
physical parameters of the semiconductor device. Additional methods and
architectures are described herein. |
| Filed: 1/6/2016 |
| Application Number: 14/989633 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Attribution for Derwent World Patents Index Records published on Sandia ® Clarivate. All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |