Method of making a silicon nanowire device
| Patent Number: | 9,660,026 |
| Issued: | 5/23/2017 |
| Official Filing: | View the Complete Patent |
| Abstract: | There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation. The method, in examples, includes thinning the nanowire through iterative oxidation and etching of the oxidized portion. |
| Filed: | 11/17/2016 |
| Application Number: | 15/354,196 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |