| Abstract: The various technologies presented herein relate to utilizing visible
light in conjunction with a thinned structure to enable characterization
of operation of one or more features included in an integrated circuit
(IC). Short wavelength illumination (e.g., visible light) is applied to
thinned samples (e.g., ultra-thinned samples) to achieve a spatial
resolution for laser voltage probing (LVP) analysis to be performed on
smaller technology node silicon-on-insulator (SOI) and bulk devices.
Thinning of a semiconductor material included in the IC (e.g., backside
material) can be controlled such that the thinned semiconductor material
has sufficient thickness to enable operation of one or more features
comprising the IC during LVP investigation. |
| Filed: 8/26/2015 |
| Application Number: 14/836713 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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