| Abstract: A vertical III-nitride thin-film power diode can hold off high voltages
(kV's) when operated under reverse bias. The III-nitride device layers
can be grown on a wider bandgap template layer and growth substrate,
which can be removed by laser lift-off of the epitaxial device layers
grown thereon. |
| Filed: 12/2/2015 |
| Application Number: 14/957012 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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