Vertical III-nitride thin-film power diode
| Patent Number: | 9,595,616 |
| Issued: | 3/14/2017 |
| Official Filing: | View the Complete Patent |
| Abstract: | A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon. |
| Filed: | 12/2/2015 |
| Application Number: | 14/957,012 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |