| Abstract: Described methods are useful for depositing a silicon carbide film
including Alpha-SiC at low temperatures (e.g., below about 1400.degree.
C.), and resulting multi-layer structures and devices. A method includes
introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a
reaction chamber, and reacting the chlorinated hydrocarbon gas with the
chlorosilicon gas at a temperature of less than about 1400.degree. C. to
grow the silicon carbide film. The silicon carbide film so-formed
includes Alpha-SiC. |
| Filed: 8/5/2014 |
| Application Number: 14/452322 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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