| Abstract: The present invention provides methods for etching semiconductor devices,
such aluminum nitride resonators. The methods herein allow for devices
having improved etch profiles, such that nearly vertical sidewalls can be
obtained. In some examples, the method employs a dry etch step with a
primary etchant gas that omits BCl.sub.3, a common additive. |
| Filed: 6/2/2015 |
| Application Number: 14/728810 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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