| Abstract: The present invention includes a high-speed, high-saturation power
detector (e.g., a photodiode) compatible with a relatively simple
monolithic integration process. In particular embodiments, the photodiode
includes an intrinsic bulk absorption region, which is grown above a main
waveguide core including a number of quantum wells (QWs) that are used as
the active region of a phase modulator. The invention also includes
methods of fabricating integrated photodiode and waveguide assemblies
using a monolithic, simplified process. |
| Filed: 7/16/2015 |
| Application Number: 14/801257 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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