| Abstract: | The present invention includes a high-speed, high-saturation power
detector (e.g., a photodiode) compatible with a relatively simple
monolithic integration process. In particular embodiments, the photodiode
includes an intrinsic bulk absorption region, which is grown above a main
waveguide core including a number of quantum wells (QWs) that are used as
the active region of a phase modulator. The invention also includes
methods of fabricating integrated photodiode and waveguide assemblies
using a monolithic, simplified process. |