| Abstract: The present invention relates to resistive random-access memory (RRAM or
ReRAM) systems, as well as methods of employing multiple state variables
to form degenerate states in such memory systems. The methods herein
allow for precise write and read steps to form multiple state variables,
and these steps can be performed electrically. Such an approach allows
for multilevel, high density memory systems with enhanced information
storage capacity and simplified information retrieval. |
| Filed: 8/18/2014 |
| Application Number: 14/462472 |
Related Opportunity:
Full Stack Neuromorphic
|
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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