| Abstract: Selective layer disordering in a doped III-nitride superlattice can be
achieved by depositing a dielectric capping layer on a portion of the
surface of the superlattice and annealing the superlattice to induce
disorder of the layer interfaces under the uncapped portion and suppress
disorder of the interfaces under the capped portion. The method can be
used to create devices, such as optical waveguides, light-emitting
diodes, photodetectors, solar cells, modulators, laser, and amplifiers. |
| Filed: 11/13/2014 |
| Application Number: 14/540686 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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