| Abstract: The present invention is directed generally to resistive random-access
memory (RRAM or ReRAM) devices and systems, as well as methods of
employing a thermal resistive model to understand and determine switching
of such devices. In particular example, the method includes generating a
power-resistance measurement for the memristor device and applying an
isothermal model to the power-resistance measurement in order to
determine one or more parameters of the device (e.g., filament state). |
| Filed: 2/3/2015 |
| Application Number: 14/612958 |
Related Opportunity:
Full Stack Neuromorphic
|
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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