Method for making field-structured memory materials

United States Patent

May 21, 2002
View the Complete Patent at the US Patent & Trademark Office
A method of forming a dual-level memory material using field structured materials. The field structured materials are formed from a dispersion of ferromagnetic particles in a polymerizable liquid medium, such as a urethane acrylate-based photopolymer, which are applied as a film to a support and then exposed in selected portions of the film to an applied magnetic or electric field. The field can be applied either uniaxially or biaxially at field strengths up to 150 G or higher to form the field structured materials. After polymerizing the field-structure materials, a magnetic field can be applied to selected portions of the polymerized field-structured material to yield a dual-level memory material on the support, wherein the dual-level memory material supports read-and-write binary data memory and write once, read many memory.
Martin; James E. (Tijeras, NM), Anderson; Robert A. (Albuquerque, NM), Tigges; Chris P. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
February 22, 2001
427/487 ; 427/128; 427/130; 427/132; 427/385.5; 427/532; 427/548; 427/599;
C08F 2/44 (20060101); C08F 002/46 ();
This invention was made with Government support under Contract No. DE-AC04-94AL85000 awarded by the Department of Energy. The Government has certain rights in the invention.