InGaAsN/GaAs heterojunction for multi-junction solar cells

United States Patent

June 26, 2001
View the Complete Patent at the US Patent & Trademark Office
Heterojunction for Multi-Junction Solar Cells
An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0<x.ltoreq.0.2 and 0<y.ltoreq.0.04 and a p-type GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.
Kurtz; Steven R. (Albuquerque, NM), Allerman; Andrew A. (Albuquerque, NM), Klem; John F. (Albuquerque, NM), Jones; Eric D. (Edgewood, NM)
Sandia Corporation (Albuquerque, NM)
May 19, 1999
257/461 ; 136/252; 257/431;
H01L 31/06 (20060101); H01L 031/06 ();
257/431,461 136/252
GOVERNMENT RIGHTS This invention was made with Government support under Contract No. DE-AC 04-94AL85000 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.