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Ballistic reversible superconducting memory element

United States Patent

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March 29, 2022
View the Complete Patent at the US Patent & Trademark Office
A reversible memory element is provided. The reversible memory element comprises a reversible memory cell comprising a Josephson junction and a passive inductor. A ballistic interconnect is connected to the reversible memory cell by a bidirectional input/output port. A polarized input fluxon propagating along the ballistic interconnect exchanges polarity with a stationary stored fluxon in the reversible memory cell in response to the input fluxon reflecting off the reversible memory cell.
16/ 943,613
July 30, 2020
H01L 39/12 (20060101)G11C 11/16 (20060101)H01L 39/10 (20060101)H01L 39/02 (20060101)H01L 39/22 (20060101)G01R 33/035 (20060101)H01L 39/00 (20060101)G11C 11/44 (20060101)
STATEMENT OF GOVERNMENT INTEREST This invention was made with United States Government support under Contract No. DE-NA0003525 between National Technology & Engineering Solutions of Sandia, LLC and the United States Department of Energy. The United States Government has certain rights in this invention.