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Two-terminal electronic charge resistance switching device
United States Patent
10,950,790 | |
March 16, 2021 | |
View the Complete Patent at the US Patent & Trademark Office | |
A two-terminal memory device and methods for its use are provided. In the device, a bottom electrode is electrically continuous with a first operating terminal, and a control gate electrode is electrically continuous with a second operating terminal. A stack of insulator layers comprising a hopping conduction layer and a tunnel layer is contactingly interposed between the bottom electrode and the control gate electrode. The tunnel layer is thinner than the hopping conduction layer, and it has a wider bandgap than the hopping conduction layer. The hopping conduction layer consists of a material that supports electron hopping transport. | |
16/ 798,723 | |
February 24, 2020 | |
1/1 | |
H01L 45/00 (20060101)G11C 13/00 (20060101) | |
;365/148 | |
ACKNOWLEDGEMENT OF GOVERNMENT SUPPORT This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |