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Two-terminal electronic charge resistance switching device

United States Patent

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March 16, 2021
View the Complete Patent at the US Patent & Trademark Office
A two-terminal memory device and methods for its use are provided. In the device, a bottom electrode is electrically continuous with a first operating terminal, and a control gate electrode is electrically continuous with a second operating terminal. A stack of insulator layers comprising a hopping conduction layer and a tunnel layer is contactingly interposed between the bottom electrode and the control gate electrode. The tunnel layer is thinner than the hopping conduction layer, and it has a wider bandgap than the hopping conduction layer. The hopping conduction layer consists of a material that supports electron hopping transport.
16/ 798,723
February 24, 2020
H01L 45/00 (20060101)G11C 13/00 (20060101)
ACKNOWLEDGEMENT OF GOVERNMENT SUPPORT This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.