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Methods of epsilon-near-zero optical modulation

United States Patent

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10,908,440
February 2, 2021
View the Complete Patent at the US Patent & Trademark Office
A method of optical modulation in a non-resonant epsilon-near-zero (EMZ) plasmonic electro-optical modulator is provided. An optical carrier is injected into a waveguide optically coupled to a layer of transparent conductive material having an epsilon-near-zero (ENZ) wavelength. The transparent conductive material layer constitutes a portion of a capacitive structure that includes a gate dielectric layer. A time-varying bias voltage applied across the gate dielectric layer shifts the ENZ wavelength toward the carrier wavelength, and thereby impresses a phase modulation pattern on the carrier wave.
16/ 510,012
July 12, 2019
1/1
G02F 1/025 (20060101)G02F 1/01 (20060101)G02F 1/00 (20060101)G02F 1/015 (20060101)
GOVERNMENT RIGHTS IN THE INVENTION This invention was made with United States Government support under Contract No. DE-NA0003525 between National Technology & Engineering Solutions of Sandia, LLC and the United States Department of Energy/National Nuclear Security Administration. The United States Government has certain rights in this invention.