Licensing Opportunity Contact Form
Submission of this form should not be interpreted as an offer to license technology. All licenses are subject to negotiation and availablility of the intellectual property for licensing. This form is intended for indications of interest only.

Search/Browse Tech

Methods of epsilon-near-zero optical modulation

United States Patent

To discuss licensing opportunities, fill out our Contact Form 
February 2, 2021
View the Complete Patent at the US Patent & Trademark Office
A method of optical modulation in a non-resonant epsilon-near-zero (EMZ) plasmonic electro-optical modulator is provided. An optical carrier is injected into a waveguide optically coupled to a layer of transparent conductive material having an epsilon-near-zero (ENZ) wavelength. The transparent conductive material layer constitutes a portion of a capacitive structure that includes a gate dielectric layer. A time-varying bias voltage applied across the gate dielectric layer shifts the ENZ wavelength toward the carrier wavelength, and thereby impresses a phase modulation pattern on the carrier wave.
16/ 510,012
July 12, 2019
G02F 1/025 (20060101)G02F 1/01 (20060101)G02F 1/00 (20060101)G02F 1/015 (20060101)
GOVERNMENT RIGHTS IN THE INVENTION This invention was made with United States Government support under Contract No. DE-NA0003525 between National Technology & Engineering Solutions of Sandia, LLC and the United States Department of Energy/National Nuclear Security Administration. The United States Government has certain rights in this invention.