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Method of fabricating photosensitive devices with reduced process-temperature budget

United States Patent

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February 2, 2021
View the Complete Patent at the US Patent & Trademark Office
A method is provided for fabricating a backside-illuminated photodetector in which a device wafer is joined to a readout wafer in an IC hybridization step. Before the IC hybridization step, the device layer is defined in the device wafer, and an LPCVD layer is formed over the device layer. The LPCVD layer may be a passivation layer, an antireflection coating, or both. The side of the device wafer having the LPCVD layer is bonded to a handle wafer, the IC is hybridized by mating the device wafer to the readout wafer, and the handle wafer is then removed, exposing the LPCVD layer. Because the LPCVD layer is formed before the active devices are fabricated, it can be made by high-temperature techniques for deposition and processing. Accordingly, a layer of high quality can be fabricated without any hazard to the active devices.
16/ 401,821
May 2, 2019
H01L 27/14 (20060101)H01L 31/18 (20060101)H01L 31/102 (20060101)H01L 31/0216 (20140101)H01L 31/0232 (20140101)
ACKNOWLEDGEMENT OF GOVERNMENT SUPPORT This invention was made with United States Government support under Contract No. DE-NA0003525 between National Technology & Engineering Solutions of Sandia, LLC and the United States Department of Energy/National Nuclear Security Administration. The United States Government has certain rights in this invention.