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ScAIN etch mask for highly selective etching

United States Patent

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May 12, 2020
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A fabrication process employing the use of ScAlN as an etch mask is disclosed. The ScAlN etch mask is chemically nonvolatile in fluorine-based etch chemistries and has a low sputter yield, resulting in greater etch mask selectivity and reduced surface roughness for silicon and other semiconductor materials. The ScAlN etch mask has an etch mask selectivity of greater than 200,000:1 relative to silicon compared to an etch mask selectivity of less than 40,000:1 for a prior art AlN etch mask relative to silicon. Further, due to reduced sputtering of the ScAlN etch mask, and thus reduced micromasking, the ScAlN etch mask yielded a surface roughness of 0.6 .mu.m compared to a surface roughness of 2.8 .mu.m for an AlN etch mask.
August 12, 2019
H01L 21/321 (20060101); H01L 21/3213 (20060101); H01L 23/532 (20060101); H01L 21/02 (20060101); H01L 21/687 (20060101);
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.