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Regrowth method for fabricating wide-bandgap transistors, and devices made thereby

United States Patent

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10,553,697
February 4, 2020
View the Complete Patent at the US Patent & Trademark Office
Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.
16/385,193
April 16, 2019
1/1;
H01L 29/66 (20060101); H01L 21/306 (20060101); H01L 29/778 (20060101); H01L 21/02 (20060101); H01L 21/74 (20060101); H01L 21/203 (20060101); H01L 21/205 (20060101); H01L 21/18 (20060101);
STATEMENT OF GOVERNMENT INTEREST This invention was made with United States Government support under Contract No. DE-NA0003525 between National Technology & Engineering Solutions of Sandia, LLC and the United States Department of Energy/National Nuclear Security Administration. The United States Government has certain rights in this invention.