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Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
United States Patent
10,553,697 | |
February 4, 2020 | |
View the Complete Patent at the US Patent & Trademark Office | |
Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided. | |
16/ 385,193 | |
April 16, 2019 | |
1/1 | |
H01L 29/66 (20060101)H01L 21/306 (20060101)H01L 29/778 (20060101)H01L 21/02 (20060101)H01L 21/74 (20060101)H01L 21/203 (20060101)H01L 21/205 (20060101)H01L 21/18 (20060101) | |
STATEMENT OF GOVERNMENT INTEREST This invention was made with United States Government support under Contract No. DE-NA0003525 between National Technology & Engineering Solutions of Sandia, LLC and the United States Department of Energy/National Nuclear Security Administration. The United States Government has certain rights in this invention. |